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Atmospheric Pressure CVD (APCVD) System

The CVD system manufactured by our group company is atmospheric pressure CVD (APCVD) system for silicon oxide (SiO2) deposition such as an interlayer insulator deposition, passivation deposition (protective deposition), and back seal (for epitaxial wafers). The system lineup includes continuous, single-wafer, and batch types. We have a proven track record with domestic and overseas wafer and device manufacturers.

High-performance Single-wafer Processing Atmospheric Pressure CVD (APCVD) System (A200V)

  • Semiconductor Manufacturing System
  • Atmospheric Pressure CVD (APCVD) System
  • AMAYA

Small quantities and wide varieties. 
NSG(SiO2)/PSG/BPSG deposition.
Single-wafer processing atmospheric pressure CVD (APCVD) system (Compatible with 8-inch SiC wafers)

A200V is a single-wafer processing atmospheric pressure CVD system (APCVD system) for silicon oxide (SiO2) deposition, such as interlayer insulating deposition, passivation deposition (protective deposition), and sacrificial deposition.

【Features】
 ・Ideal for insulating depositions and diffusion/plasma mask depositions.
 ・Low particle film deposition by single-wafer face-down deposition.
 ・High safety and deposition stability by using a sealed chamber.
 ・Wafer warp correction function (patented) for SiC wafers.
 ・Low-load, long-cycle maintenance.
 ・Compact cabinet and adjacent installation to the mirror type for space saving.
 ・Low CoO (low running cost)

【Applications】
 ・Interlayer dielectric deposition for power semiconductors (NSG/PSG/BPSG)
 ・Hard mask for diffusion/ion implantation, Sacrificial depositions (NSG)
 ・Passivation depositions (protective depositions, insulating depositions) (NSG)
 ・Optical Waveguide (NSG/BPSG)

*For more information, please contact us or download our catalog.

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BASIC INFORMATION

The face-down deposition method, in which the wafer is heated in a sealed chamber with the deposition surface facing down, the back side adsorbed, and the process gas is blown up from the bottom, achieves safe, high-quality deposition with low particle counts. The patented wafer warpage correction function enables reliable adsorption of wafers with large warpage, such as SiC wafers, to achieve excellent film thickness uniformity.
The composition reducing the adhesion of side reaction products around the wafer improves maintainability (low load and long cycle time).
The compact cabinet size allows adjacent installation to minimize the footprint.
●Equipment size (mm): 890(W) x 2300(D) x 2250(H)
●Gas type: SiH4/O2 (SiH4/PH3/B2H6/O2/N2)
     TEOS/O3 (TEOS/TMOP/TEB/O3/O2/N2) (optional)
●Deposition temperature: 350~450 degrees.

*For more information, please contact us or download our catalog.

APPLICATIONS/SALES RECORD

【Applications】
 ・Interlayer dielectric for power semiconductors (NSG/PSG/BPSG)
 ・Hard mask for diffusion/implanter, Sacrificial deposition (NSG)
 ・Passivation deposition (protective deposition, insulating deposition) (NSG)
 ・Optical Waveguide (NSG/BPSG)

【Delivery Record】
 ・Domestic and foreign semiconductor device manufacturers.
 ・Universities, research institutes, and research laboratories.

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APCVD_AMAX800V

  • APCVD_AMAX800V

High-productivity Continuous Atmospheric Pressure CVD (APCVD) System (AMAX800V)

  • Semiconductor Manufacturing System
  • Atmospheric Pressure CVD (APCVD) System
  • AMAYA

Mass Production / NSG(SiO2)/PSG/BPSG deposition 
High-productivity/Continuous atmospheric pressure CVD (APCVD) system (for up to 8-inch wafers)

The AMAX series is a continuous atmospheric pressure CVD system (APCVD system) for silicon oxide (SiO2) deposition, such as interlayer insulator deposition, passivation deposition (protective deposition), and back seal (for epitaxial wafers).

【Features】
 ・High productivity of up to 100 wafers/hr. (wafer size: up to 8 inches)
 ・No vacuum or plasma is required (thermal CVD)
 ・SiC trays are used to prevent heavy metal contamination.
 ・Simple maintenance.
 ・Low CoO (low running cost)
【Applications】
 ・Back seal for epitaxial wafers (NSG)
 ・Interlayer insulator deposition for power semiconductors (NSG/PSG/BPSG)
 ・Hard mask for diffusion/Ion implantation, Sacrificial deposition (NSG)
 ・Passivation deposition (protective deposition, insulating deposition) (NSG)

*For more information, please contact us or download our catalog.

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BASIC INFORMATION

High throughput (high productivity) is achieved by continuously conveying a tray with wafers on it and passing it under the dispersion head (gas nozzle) while heating it from the bottom.
The use of SiC for the tray material minimizes heavy metal contamination to ensure stable process performance over the long term.
The AMAX800V is easy to maintain with its automatic replacement function that facilitates tray replacement.
The AMAX800V can handle wafers up to 8 inches and can deposit up to 100 wafers per hour.
The AMAX800V2, which further improves the maintainability of the AMAX800V, is also lined up.
●System size (mm): 1460mm(W) x 3830mm(D) x 2250mm(H)
●Gas type: SiH4/O2 (SiH4/PH3/B2H6/O2/N2)
●Deposition temperature: 350-430 degrees C.

*For more information, please contact us or download our catalog.

APPLICATIONS/SALES RECORD

【Applications】
 ・Back seal for epitaxial wafers (NSG)
 ・Interlayer insulator deposition for power semiconductors (NSG/PSG/BPSG)
 ・Hard mask for diffusion/Ion implantation, Sacrificial deposition (NSG)
 ・Passivation deposition (protective deposition, insulating deposition) (NSG)
【Delivery Record】
 ・Domestic and overseas wafer manufacturers
 ・Semiconductor device manufacturers
 ・AMAX series total: More than 180 units

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APCVD_AMAX1200

  • APCVD_AMAX1200

High-productivity Continuous Atmospheric Pressure CVD (APCVD) System (AMAX1200)

  • Semiconductor Manufacturing System
  • Atmospheric Pressure CVD (APCVD) System
  • AMAYA

Mass production / NSG(SiO2)/PSG/BPSG deposition
High-productivity / Continuous atmospheric pressure CVD (APCVD) system (for 12-inch wafers)

The AMAX series is a continuous atmospheric pressure CVD system (APCVD system) for silicon oxide (SiO2) deposition, such as an interlayer insulator deposition, passivation deposition (protective deposition), and back seal (for epitaxial wafers).

【Features】
 ・High productivity of up to 56 wafers/h (wafer size: up to 12 inches)
 ・No vacuum or plasma is required (thermal CVD)
 ・SiC trays are used to prevent heavy metal contamination.
 ・Simple maintenance.
 ・Low CoO (low running cost)
【Applications】
 ・Back seal for epitaxial wafers (NSG)
 ・Passivation deposition (protective deposition, insulating deposition) (NSG)

*For more information, please contact us or download our catalog.

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BASIC INFORMATION

High throughput (high productivity) is achieved by continuously conveying a tray with wafers on it and passing it under the dispersion head (gas nozzle) while heating it from the bottom.
The use of SiC for the tray material minimizes heavy metal contamination to ensure stable process performance over the long term.The AMAX1200 is easy to maintain, with an automatic replacement function that facilitates tray replacement.
The AMAX1200 can handle wafers up to 12 inches and can deposit up to 56 wafers per hour.
●System size (mm): 2165mm(W) x 4788mm(D) x 2250mm(H)
●Gas type: SiH4/O2 (SiH4/PH3/B2H6/O2/N2)
●Deposition temperature: 350-430 degrees C.

*For more information, please contact us or download our catalog.

APPLICATIONS/SALES RECORD

【Applications】
 ・Back seal for epitaxial wafers (NSG)
 ・Passivation deposition (protective deposition, insulating deposition) (NSG)
【Delivery Record】
 ・Domestic and overseas wafer manufacturers
 ・Semiconductor device manufacturers
 ・AMAX series total: More than 180 units

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APCVD_D501

  • APCVD_D501

Atmospheric Pressure CVD (APCVD) System for Small-scale Production and Development (D501)

  • Semiconductor Manufacturing System
  • Atmospheric Pressure CVD (APCVD) System
  • AMAYA

For prototyping, development, and small lot production
For deposition of NSG(SiO2)/BSG/PSG/BPSG
Batch processing (simultaneous processing of multiple substrates) APCVD system

The D501 is a batch processing (multiple-unit simultaneous processing) atmospheric pressure CVD system (APCVD system) for small-volume production/testing and silicon oxide deposition (SiO2 deposition) on irregularly shaped substrates.

【Features】
 ・Simultaneous processing of substrates of different shapes and sizes
 ・High deposition speed
 ・Simple maintenance
 ・Small footprint
 ・Low CoO (low running cost)
【Applications】
 ・Interlayer insulating (NSG/PSG/BPSG)
 ・Hard mask for diffusion/ion implantation, Sacrificial deposition (NSG)
 ・Passivation deposition (protective deposition, insulating deposition) (NSG)
 ・Source films for solid phase diffusion for solar cells (BSG, PSG)/Cap deposition (NSG)

*For more information, please contact us or download our catalog.

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BASIC INFORMATION

Multiple wafers are manually loaded into a large tray, and the tray is moved back and forth under the dispersion head (gas nozzle) to perform deposition.
The features of atmospheric pressure CVD (APCVD) are retained, and films can be easily deposited.
Delivery record
 Domestic and foreign semiconductor device and opto-device manufacturers
 Universities and research institutes
Equipment size (mm): 1200(W) x 2480(D) x 1940(H)
Gas type: SiH4/O2 (SiH4/PH3/B2H6/O2/N2)
     TEOS/O3 (TEOS/TMOP/TEB/O3/O2/N2) (option)
     SiH4/O3 (SiH4/PH3/B2H6/O3/O2/N2)(option)
Deposition temperature: 350-430 degrees (150-300 degrees for SiH4/O3)

*For more information, please contact us or download our catalog.

APPLICATIONS/SALES RECORD

【Applications】
 ・Interlayer insulating deposition (NSG/PSG/BPSG)
 ・Hard mask for diffusion/ion implanter, Sacrificial deposition (NSG)
 ・Passivation deposition (protective deposition, insulating deposition) (NSG)
 ・Source deposition for solid phase diffusion for solar cells (BSG, PSG)/Cap deposition (NSG)

【Delivery Record】
 ・Domestic and overseas semiconductor device and opto-device manufacturers
 ・Universities and research institutes

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APCVD_AMAX1000S

  • APCVD_AMAX1000S

Continuous Atmospheric Pressure CVD System for solar cell mass production (AMAX1000S)

  • Semiconductor Manufacturing System
  • Atmospheric Pressure CVD (APCVD) System
  • AMAYA

For mass production of crystalline Si solar cells/For NSG(SiO2)/PSG/BSG deposition
High productivity/Continuous atmospheric pressure CVD (APCVD) system

AMAX1000S is a continuous atmospheric pressure CVD system (APCVD system) developed for solar cell products based on the achievements of the "AMAX" series.

【Features】
 ・Compatible with 156 mm square/125 mm square wafers
 ・High productivity of 1500 wafers per hour
 ・Compatible with thin wafers for solar cells
【Applications】
 ・Hard mask for diffusion/ion implantation, Sacrificial deposition (NSG)
 ・Passivation deposition (protective deposition, insulating deposition) (NSG)
 ・Source deposition for solid phase diffusion (BSG, PSG)/Cap deposition (NSG)

*For more information, please contact us or download our catalog.

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BASIC INFORMATION

A large dispersion head (gas nozzle) and ultra high-speed double-arm transfer mechanism are installed to enable mass production that meets solar cell production needs.
In addition, a special wafer holder, lamp heating mechanism, multi-stage Bernoulli chuck, etc. are used to accommodate thin wafers for solar cells.
●System size (mm): 1860(W) x 5900(D) x 2100(H)
●Gas type: SiH4/O2 (SiH4/PH3/B2H6/O2/N2)
●Deposition temperature: up to 430 degrees C

*For more information, please contact us or download our catalog.

APPLICATIONS/SALES RECORD

【Applications】
 ・Hard mask for diffusion/ion implantation, Sacrificial deposition (NSG)
 ・Passivation deposition (protective deposition, insulating deposition) (NSG)
 ・Source deposition for solid phase diffusion (BSG, PSG)/Cap deposition (NSG)

【Delivery Record】
 ・Domestic and overseas solar cell manufacturers

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ガラス基板成膜装置 / Glass Substrate Deposition System

  • ガラス基板成膜装置 / Glass Substrate Deposition System

Glass Substrate Deposition System “Low Temperature Deposition” “Flexible Substrate Support”

  • Semiconductor Manufacturing System
  • Atmospheric Pressure CVD (APCVD) System
  • AMAYA

4.5 generation glass substrate deposition system for rigid/flexible devices such as FPD.

4.5 generation glass substrate deposition system for rigid/flexible devices such as FPD.

【Features】
 ・Low temperature (150-300 degrees C) deposition
 ・Deposition of 100 nm SiO2 film on 4.5 generation glass substrates at 250 degrees C with a
throughput of 25 wafers/hour or more
 ・Simple maintenance
 ・Low CoO (low running cost)
 ・High-quality SiO2 deposition formation: low stress, no plasma damage, small particles
 ・Low installation and maintenance cost: small footprint, no need for vacuum or plasma  
  treatment
【Applications】
 ・Insulating deposition for FPD (NSG)
 ・Oxide semiconductor TFT passivation deposition (NSG)

*Please contact us for more information.

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BASIC INFORMATION

Equipped with two gas heads with an effective deposition width of 760 mm and an adsorption-type heating stage achieving temperature controllability within ±3%.
It is capable of depositing 100 nm SiO2 deposition on 4.5 generation glass substrates at 250 degrees C with a throughput of 25 wafers/hour or more, ensuring deposition thickness uniformity of less than 10%.
●System size (mm): 1300(W) x 7350(D) x 2000(H)
●Gases: SiH4, O3/O2, PH3, B2H6
●Deposition temperature: 150-300 degrees C

*Please contact us for more information.

APPLICATIONS/SALES RECORD

【Applications】
・Insulating deposiotion for FPD (NSG)
・Oxide semiconductor TFT passivation deposiotion (NSG)

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